Top-GaN company manufactures semiconductor laser diodes emitting light with wavelength of 400-420 nm. This technology is based on the method of GaN crystal growth under high pressure developed at the Institute of High Pressure Physics of the Polish Academy of Sciences (Instytut Wysokich Ciśnień PAN) and a number of technologies of epitaxial crystal growth such as MOVPE, MBE and HVPE. At present the company offers impulse lasers with peak power up to 500 mW and it starts offering lasers for continuous operation with power up to 100 mW.
Contact details:
ul. Sokołowska 29/37
01-142 Warszawa
sales@topganlasers.com
tel. +48 22 876 03 10
www.topganlasers.com